Furukawa Expands Cristal Materials Development Activity

Furukawa expands research and development activity for crystal materials. The firm launches monthly 2,000 units of gallium nitride (GaN) substrate by end of March 2010 when the demand increases for blue violet laser diode of next generation laser disc and light emitting diode of lighting. The firm also develops scintilator crystal by developing of lutetium-aluminium-garnet (LuAG) crystal and mammography with the crystal. The firm makes 2 inches GaN substrate at Oyama plant in Tochigi shipping sample for research institutes. The product is still middle of the development but the firm is confident for the quality. Demand for GaN semiconductor is expected to grow for next generation laser disc, backlight of liquid crystal and LED.

However, the higher cost is the hurdle to expand the applications when the cost is several 10 times of current gallium arsenide semiconductor. Furukawa consolidated the production into Oyama plant in April to reduce the cost and lead time significantly while the firm has downstream operation in Osaka and research center in Ibaraki. The firm also expands the development of high valued GaN epitaxial substrate through new research center at Oyama plant.

The firm expects scintilator crystal is used for next generation positron emission tomography (PET) and mammography. The firm already succeeded to make prototype of mammography through the joint development with college and medical institution. The firm tries to develop commercial model in 3 years with the subsidiary from New Energy and Industrial Technology Development Organization (NEDO).