Sumitomo Electric Industries Develops 6-inch GaN Substrate for LEDs

Sumitomo Electric Industries announced on Tuesday the firm successfully developed world-first 6-inch diameter GaN (gallium nitride) substrate for white LEDs (light emitting diodes). Larger diameter GaN substrate enables more volume of LED chip production and productive cost reduction. GaN substrate is also expected to be used for power devices. Sumitomo Electric Industries aims to establish commercial productive method for 6-inch diameter GaN substrate early.

White LED chips are generally produced from wafers using 2-4 inch diameter sapphire substrates with GaN epitaxial layer. By using GaN substrates as alternate for sapphire substrates, LED chips’ size down and high output power can be realized.

Sumitomo Electric Industries has commercially supplied 2-inch GaN substrates for blue-violet lasers applied to Blue-ray DVD players and white LED chips. The firm has developed larger diameter GaN substrates. The firm succeeded in development of 3-4 inch diameter substrates for blue-violet lasers, for which high quality is required, and 6-inch diameter substrates for white LED chips, for which low cost is required.