POWDEC K.K., Japanese maker of gallium nitride (GaN) epitaxial wafer funded by Furukawa, announced on Tuesday the firm successfully developed GaN power diode. POWDEC succeeded in low cost production of GaN power diode by adoption of sapphire substrate. Developed GaN power diode is expected to halve power loss compared with conventional silicon power diode. The firm aims to start commercial production until 2012.
Power diode is used for wide-range applications such as home appliances, electric vehicles, industrial machines and energy control conponents. Newly developed GaN power diode represents 600V breakdown voltage, triple of 200V used in general residents. POWDEC eyes adoption of the power diode for power conditioners to control unstable electric power of home appliances, inverters or natural energies. POWDEC processes GaN epitaxial layer laterally on sapphire substrate by its unique ELO (epitaxial lateral overgrowth) technology. After the process, GaN layer and sapphire substrate are separated. This method enables productive cost as low as LEDs (light emitting diodes).Japan Steel Scrap Composite Prices (Sangyo Press)
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