Nippon Steel to Triple SiC Wafer Output

Nippon Steel’s electronic materials making subsidiary, Nippon Steel Materials announced on Monday the firm expands output capacity of single crystal SiC wafer with 4 inches or less diameter to around 3 times at 10 million units per month by March 2012. The firm expands the output capacity in Saitama when Nippon Steel agreed with Cree, Inc. of USA for license contract. Nippon Steel Materials tries to expand the sales to power semiconductor for power generation, transformer and motor.

SiC, has property of diamond and silicone, can reduce power conversion loss to a tenth or less level of silicon wafer. SiC is used for substrate of power semiconductor due to the higher voltage resistance and heat resistance under severe condition. SiC is expected to be used as inverter for appliances, power conditioner and hybrid vehicle.

Nippon Steel announced on Monday the firm agreed with Cree for mutual license on single crystal SiC wafer and the epitaxial wafer. Nippon Steel developed Japanese first mass production technology of single crystal SiC 4 inches wafer. Through the agreement, Nippon Steel expands the output capacity through Nippon Steel Materials to meet growing demand.